| 摘要 |
<p>PURPOSE:To form the thin film transistor element array in which a step difference on the end face in a source/drain area is reduced, and a difference disconnection occurs in smaller numbers. CONSTITUTION:A source/drain area is formed by performing impurity implantation into an amorphous silicon film 13. This array is structured so that when a metal is formed to a film thereafter, a silicide layer 17 formed on the source/ drain surface is connected electrically with a picture element electrode 16, as a source electrode. Also, by patterning a metal 9 onto the picture element electrode, the thin film transistor element array in which a step difference disconnection occurs in smaller numbers.</p> |
