MANUFACTURE OF QUANTUM ELEMENT

摘要

PURPOSE:To provide a manufacturing method for two quantum thin lines and a quantum element consisting of quantum dots sandwiched by these two quantum thin lines by way of an insulating film. CONSTITUTION:A step is formed on a silicon substrate 1. An oxidized film 2 is formed only on the side wall of the step. An epitaxial silicon film 3 is deposited and then it is made flat. The epitaxial silicon film 3 is etched into the shape of a thin line 4. An oxidized film 5 is formed only on the side wall of the thin line 4. An epitaxial silicon film 6 is deposited and then flattened. By utilizing anisotropic etching of a silicon, a ridgeline is formed.