| 摘要 |
PURPOSE:To provide a greater capacity memory utilizing the polarization of a ferroelectric substance, said memory having no mechanically movable part, and being random accessible and readable/writable. CONSTITUTION:A title device is a memory cell utilizing the polarization of a ferrodielectric substance put between electrodes of a capacitor. A storage medium 61 includes a ferrodielectric film 33 and an intermediate potential plate 34 as one electrode of those of the capacitor, which medium 61 is opposed to the other electrode 32 on a semiconductor substrate 30 to form the capacitor which capacitor is in turn controlled by a MOS transistor 31 on the substrate 30. |
