| 摘要 |
PURPOSE:To provide a method for forming a film of CuXSe2 (where X refers to In, Ga or Al) by means of uniform selenide formation without using toxic SeH2 and a method for annealing at a low temperature for improving characteristics of a solar battery. CONSTITUTION:After a film comprising Cu and X elements is formed on a substrate 21, it is housed in a reaction chamber, where selenide formation is performed by generating hydrogen plasma in the presence of selenium vapor in the reaction chamber. In addition after a p-type CuXSe2 film 23 and an n-type CdS film 24 or the like are laminated on the substrate, the laminate is housed in the reaction chamber where hydrogen plasma is generated in the presence of selenium vapor in the reaction chamber whereby uncoupled hands of the X elements at a crystal boundary of the CuXSe2 film are terminated so as to improve characteristics. |
