| 摘要 |
PURPOSE:To provide the structure, wherein the generation of a crystal defect and a characteristic failure is prevented and an electric field concentration is prevented from being generated, of a vertical MOSFET to its structure, wherein a well and a gate oxide film are overlapped with each other for preventing the generation of the electric field concentration, the crystal defect is frequently generated in this overlapped region and when this is restrained from being generated, the characteristic failure due to an unsatisfactory configu ration is generated, in the manufacturing of the MOSFET. CONSTITUTION:A silicon nitride film 4 is selectively formed and a P<-> well 5 is formed. After that, a field oxide film 6 is formed on the surface of the well 5 in a self-alignment manner and after the film 4 is removed, a gate oxide film 7 is formed at a part, in which there no well 5, of a P<-> epitaxial layer 2 in a self-alignment manner. |
