| 摘要 |
PURPOSE:To perform physical particle simulation with a high precision with an arbitrary analysis time scale by performing particle simulation only for a minute time just before output and performing fluid simulation except for this minute time. CONSTITUTION:At the time of transient analysis of an electron transporting phenomenon in an NMOS semiconductor element, information of the analysis structure is first read in, and a bias condition and time control information are next read in. The state at the initial time is calculated by fluid simulation. Fluid simulation P4 is performed till the analysis time deltat before the monitor time of DELTAt after, namely, for the time DELTAt-deltat. Next, particle simulation P5 is performed till the monitor time, namely, for the analysis time deltat. Thereafter, the calculation result is monitored and outputted at P6 on demand. The simulation is repeated from P4 till arrival at the end time of transient analysis. |
