| 摘要 |
PURPOSE:To improve the operation speed of a semiconductor integrated circuit and to prevent the thermal breakdown of the integrated circuit by enhancing the effect of dissipating internal heat developed in elements of the integrated circuit. CONSTITUTION:Between elements (p-type transistor 2, n-type transistor region 3) provided on a semiconductor substrate 1 lies a thermal diffusion wiring 13 which diffuses heat developed in the elements to the periphery of an integrated circuit and has its recess 8 filled with a substance 10 of higher thermal conductivity than that of the semiconductor substrate. This thermal diffusion wiring can diffuse heat developed in elements out of the integrated circuit through a substance of higher conductivity than that of the semiconductor substrate. |
