| 摘要 |
PURPOSE:To improve light emitting brightness by growing an indirect transition type GaInP layer of good crystals on a GaP substrate. CONSTITUTION:An indirect transition type GaInP thick film layer 4 of 100mum or larger is grown on a GaP substrate 1 by means of yo-yo salute supply method, and an N-doped indirect transition type GaInP thin film layer 6 is grown on the layer 4. The thick film layer 4 prevents and buffers a defect caused by misalignment of lattices between the GaP substrate 1 and the thick film layer 4. Therefore the thin film layer of good crystals can be grown on the thick film layer 4, resulting in higher brightness of pure green light emission. |
