| 摘要 |
<p>PURPOSE:To obtain a good thin film semiconductor device, wherein an effective mobility and an ON-state current are high, by a method wherein, when a silicon film is deposited by an LPCVD method, the interior of a reaction chamber is maintained in a reducing atmosphere to heat up. CONSTITUTION:A base protective film 102 is formed on a substrate 101. Subsequently source and drain regions 103 are formed. Then, a silicon film 104, which constitutes a channel part afterwards, is deposited by an LPCVD method. At this time, the interior of a reaction chamber of an LPCVD device is maintained in a reducing atmosphere. After the silicon film deposited in such a way is subjected to patterning by a resistor, it is etched and a channel part silicon film 105 is formed. Subsequently a gate insulating film 106 is formed. After that, after a gate electrode 107 is formed, a layer insulating film 108 is deposited according to the need and, moreover, after contact holes are opened, source and drain lead-out electrodes 109 are formed. Thereby, a thin film transistor displaying good transistor characteristics can be formed.</p> |
