发明名称 BLANK FOR PHASE SHIFT MASK AND PHASE SHIFT MASK AS WELL AS PRODUCTION THEREOF
摘要 PURPOSE:To prevent the charge-up phenomenon by electron beams by providing a light shielding layer consisting of chromium, etc., on shifter patterns, applying a resist thereon and subjecting the resist to superposition plotting. CONSTITUTION:Glass, such as quartz glass or low-expansion glass, which is less strained in position, is used for a transparent supporting substrate 1. An etching stopper layer 2 is provided in order to stop the etching of the shifter layer before the substrate is etched. Further, SiO2 or org. high polymer or the like is used for the shifter layer 3. A conductive layer 4 is provided under the resist layer 5 in order to prevent the charge-up at the time of the plotting by the electron beams. The light shielding layer 7 is then provided in order to form light shielding patterns and the resist 8 for patterning of the light shielding layer 7 is applied thereon. The conductive light shielding layer 7 existing under the resist is grounded in such a case, by which the charge-up phenomenon is prevented even if the shifter layer 3 has an insulating characteristic.
申请公布号 JPH0553290(A) 申请公布日期 1993.03.05
申请号 JP19910211078 申请日期 1991.08.22
申请人 TOPPAN PRINTING CO LTD 发明人 UEYAMA KOUSUKE;FUKUSHIMA YUICHI;KONISHI TOSHIO
分类号 G03F1/30;G03F1/34;G03F1/68;H01L21/027 主分类号 G03F1/30
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