| 摘要 |
PURPOSE:To provide a light-emitting semiconductor element capable of improving the light-emitting efficiency by forming a low-resistance clad layer while maintaining a large band gap difference. CONSTITUTION:In this light-emitting semiconductor element, a light-emitting activated layer 11 is sandwiched between clad layers 12, the clad layer 12 has crystal growth at the temperature with a small ordering, and this layer construction had annealing in the temperature region creating no temperature ordering lower than growth temperature after the growth of crystal. |
