| 摘要 |
PURPOSE:To provide an optical semiconductor device which can improve conversion efficiency between current and light without deterioration in current injection efficiency. CONSTITUTION:In the vicinity of a surface electrode 5 in a photoelectric conversion layer comprising an N-type semiconductor layer 1 and a P-type semiconductor layer 3, an insulation layer 15 having higher specific resistance than that of the photoelectric conversion layer is formed so that it is not in contact with the surface electrode 5. In such a device, current injected from the surface electrode 5 is supplied to a PN junction 13 avoiding the insulation layer 15, so that no current-light conversion takes place in the vicinity of the surface electrode 5. In addition since the surface electrode 5 and the insulation layer 15 are not in contact with each other, current injection efficiency may not drop. |
