| 摘要 |
PURPOSE:To prevent a poisoned via from being formed in a semiconductor device by a method wherein a nitride layer which contains the combination of silicon with nitrogen and is over 10Angstrom in thickness is provided onto the surface of a coating film. CONSTITUTION:As a nitride layer which contains the combination of silicon with nitrogen and is over 10Angstrom in thickness is formed on the surface of a coating film 4, the film 4 is lessened in moisture absorbing properties and absorbs no moisture from the air. Therefore, a viahole 8 is provided to the coating film 4, and when a second conductor pattern 7 is buried into the viahole 8, no moisture is discharged from the coating film 4. As a result the sputtered metal as the material of the second conductor pattern 7 is accurately attached to the side wall of the viahole 8. By this setup, a poisoned via is prevented from being formed. |
