AN IMPROVED ANTIFUSE AND METHOD OF MANUFACTURE THEREOF

摘要

A structure for antifuses between two vertically metal interconnection lines and method of manufacture is provided. On a portion of a first metal interconnection line an antifuse stack having at least an amorphous silicon layer (14) and a first barrier layer (15) on the amorphous silicon layer is placed. The first interconnection line and antifuse stack is covered with an insulating layer (16) having a via (27) which exposes the first barrier layer (15). The second metal interconnection line (18, 17) contacts the first barrier layer (15) through the via to form an antifuse between the first and second metal interconnection lines. A second barrier layer (13) placed beneath the amorphous silicon layer (14) may be formed as part of the first metal interconnection line or part of the antifuse stack. A compact self-aligned structure is also provided.