| 摘要 |
The method comprises (a) wet-etching the element-forming region on the substrate (1) to form a trench, (b) forming oxide (2) on the surface of (1) and partially etching (2) on the center of the trench, (c) forming epitaxial layer (3) on the trench, (d) forming depression layer (4) on (3), (e) forming collector region (5) on (4) and forming oxide (6) on a part of (5), (f) forming base region (7) on (5) and (6), (g) etching (7) on (6) and forming oxide (8), (h) etching a part of (8) to form emitter region (9), (i) etching a part of (9) and forming oxide (10), and (j) forming collector electrode (11), base electrode (12) and emitter electrode (13) by partial etching and metal processing.
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