FIELD OXIDE LAYER MAKING METHOD OF SEMICONDUCTOR DEVICE

摘要

The isolated oxide (field oxide) film of semiconductor devices is produced by (a) forming an oxide film (2) for buffering and a silicon nitride film (1) on a silicon wafer (3) by chemical vapor deposition in order, (b) selectively removing the nitride film (1) in the device isolated region by photographic etching, (c) ion implanting oxygen atoms into the isolated region using the selective removed nitride film as a mask, (d) forming an isolated oxide film by heat treating in the oxidizing furnace.