| 摘要 |
<p>A semiconductor package (10) comprises a ceramic base component (12), a plurality of bonding pads (18) of an electrically conductive metallic material, first and second electrically conductive buses (20, 22), a signal shielding component (24) which contains first and second electrically conductive plates (26, 28) electrically insulated from each other by a high temperature dielectric material (30) wherein the shielding component (24) is bonded to the base component outward of the bonding pad and the buses. A layer of a dielectric material (32) covers the surface of the shielding component (24) and a glass frit (34) is bonded to the layer of dielectric material (32). The frit (34) has the leads (36) that extend from a metallic lead frame (38) embedded in its outer surface. The leads (36), the dielectric layer (32) and the signal shiedlding component are in substantial alignment. The leads (36) are electrically connected to the bonding pad (18) and the first and second electrically conductive layers (26, 28) are connected to the first and second electrically conductive buses (20, 22). A method of forming the package comprises depositing, in sequential order and in predetermined areas upon a prefired ceramic base component, the metallic materials, such as precious metals, and precious metal alloys, the high temperature dielectrics and the glass frit. A semiconductor chip which is electrically connected to the other electrically conductive components can be hermetically sealed inside the package by sealing an impervious lid to the package.</p> |
