VERFAHREN ZUM NIEDERSCHLAGEN EINER SCHICHT AUS ZINKOXID.
摘要
<p>Zinc oxide is applied to a substrate at a low temperature by using a mixture of an organozinc compound and water carried in an inert gas. The resulting zinc oxide film has a relatively low resistivity which can be varied by addition of a group III element.</p>
申请公布号
DE3687540(D1)
申请公布日期
1993.03.04
申请号
DE19863687540
申请日期
1986.06.04
申请人
SIEMENS SOLAR INDUSTRIES L.P., CAMARILLO, CALIF., US
发明人
VIJAYAKUMAR, S., PATHAM;BLAKER, KIMBERLY A., GRANADA HILLS CALIFORNIA 91344, US;WIETING, ROBERT D., SIMI VALLEY CALIFORNIA 93065, US;WONG, BOON, RESEDA CALIFORNIA, US