| 摘要 |
A Group III element-Group VI element compound film is prepared by nebulizing a solution of a Group III element-Group VI element precursor compound of formula (I): [RaA-(BR')b]c, wherein A is Al, Ga, or In, B is S, Se, or Te, R and R' independently are substituted or unsubstituted alkyl or aryl groups, a is zero to two, b is one to three, and c is one to three; or formula (II) wherein A is Al, Ga, or In, B is S, Se, or Te, and X is -COR, -CNR2, -CR, -PR2, or -P(OR)2, wherein each R is independently a substituted or unsubstituted alkyl or aryl group; sweeping the mist into a heated chamber containing a heated substrate, depositing the precursor compound onto the heated substrate, and thermally decomposing the precursor compound to yield a Group III element-Group VI element compound film, wherein the Group III element-Group VI element compound has the formula AxBy, wherein x and y are determined by the oxidation states of A and B. Films produced by the method of the invention are of superior quality, in that the crystals of a given film are monophasic and exhibit a substantially single orientation. |
