SEMI-CONDUCTOR DEVICE WITH PN JUNCTION AND ELECTRODE ARRANGEMENT

摘要

A semiconductor device has a p-n junction having an electrode arrangement for influencing the breakdown voltage in the vicinity of the associated space-charge zone, the electrode arrangement having an electrode and an insulation layer assigned to the electrode. The device is notable for the fact that, in its zone (19) assigned to the p-type conductor (7) of the p-n junction (6), the insulation layer (10) has a thickness (d1 or d2) which is different from that in its zone (20) assigned to the associated n-type conductor (8).