MOS field-effect transistor.

摘要

A silicon MOSFET is provided, which can be made with an effective channel length of under one micrometer without incurring severe short-channel effects. The MOSFET includes first and second channel regions located between the source and drain regions, the first channel region 100 overlying the second channel region 90. The second channel region has a higher carrier density than the first channel region, and functions as a buried ground plane. <IMAGE>