| 摘要 |
<p>The CCD shift register has a final transfer electrode (15L) which is formed only by a first polysilicon layer (13), and an output gate electrode (16) which is formed by a second polysilicon layer (14). Under the output gate electrode (16), a doped region (19) is provided which is formed by a doping step of self alignment, independently of a doped region (17, 18) under the transfer electrodes (15). By this independent doping step, it is possible to choose the impurity concentration and to adjust the potential level under the output gate electrode (16) freely. <IMAGE></p> |
