| 发明名称 |
Via metallization for A1N ceramic electronic package. |
| 摘要 |
<p>Metallization formulations containing a mixture of AlN and metal are used to form hermetic vias in AlN dielectric bases for electronic packaging. The metal may be W, Mo, or mixtures thereof. The metallization may be cofired with the AlN dielectric base. The metallization is especially useful for making electrically conductive hermetic through-vias in AlN bases.</p> |
| 申请公布号 |
EP0529752(A2) |
申请公布日期 |
1993.03.03 |
| 申请号 |
EP19920250219 |
申请日期 |
1992.08.19 |
| 申请人 |
W.R. GRACE & CO.-CONN. |
发明人 |
DOLHERT, LEONARD EDWARD;LAU, JOHN WING-KEUNG;ENLOE, JACK HARRISON;LUH, ELLICE YENG |
| 分类号 |
H01L23/12;H01L21/48;H01L23/057;H01L23/10;H01L23/498;H05K1/09;H05K3/40 |
主分类号 |
H01L23/12 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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