Charge transfer device producing a noise-free output

摘要

A charge transfer device has an output structure formed, in a semiconductor substrate of a first conductivity type, of a base region of a second conductivity type, an output region of the first conductivity type formed in the base region, a reset-drain region of a second conductivity type formed separately from the base region and held at a constant potential, and a reset gate electrode formed on the semiconductor substrate between the base and reset-drain regions via an insulator film to receive a reset pulse. The base region has a portion under the output region which is designed to allow a complete depletion throughout its thickness.