| 摘要 |
PCT No. PCT/JP90/01124 Sec. 371 Date Apr. 24, 1991 Sec. 102(e) Date Apr. 24, 1991 PCT Filed Sep. 4, 1990.According to this invention, an SOI semiconductor device having a thin semiconductor film (15) formed on an insulating film (12) includes a semiconductor substrate (11), the insulating film (12) having a recess portion (13a, 13b) and formed on the semiconductor substrate (11), and a conductor (14a, 14b) buried in the recess portion (13a, 13b). In addition, the SOI semiconductor device further includes the semiconductor film (15) formed on the insulating film (12), and an impurity region (16) formed in the semiconductor film (15) and electrically connected to the conductor (14a, 14b).
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