| 摘要 |
PURPOSE:To suppress dimensional displacement of a radiation-sensitive resist film from a desired pattern due to variation of film thickness of the resist film by providing a thin film essentially comprising a conjugate polymer between a substrate and the radiation-sensitive resist. CONSTITUTION:A thin film essentially comprising a conjugate polymer is provided between the substrate and the radiation-sensitive resist. Namely, after forming the thin film (lower resist layer) essentially comprising a conjugate polymer on the substrate, the resist film (upper resist layer) which is sensitive to radiation to form a pattern is formed to obtain the two-layer structure rediation-sensitive resist. Then, a pattern is formed in the resist of the upper layer by irradiation for pattern forming and development. This upper layer resist is used as a mask to remove the resist of the lower layer in the area exposed through the aperture of the upper layer by dry etching. Thus, the pattern of the two-layer radiation-sensitive resist is formed. As for the substrate, any material is used by selecting from those used for a lithographic process. |
