SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF

摘要

PURPOSE: To inhibit undesired silicon deposition on the interface of a metalized layer containing aluminum and silicon and single-crystal silicon. CONSTITUTION: In a semiconductor device formed by having a main body 1 of single-crystal semiconductor provided with a dielectric layer 2 having a contact hole 3 and by contacting a metalized layer 4 containing aluminum and silicon through the contact hole to the main body of semiconductor, in order to inhibit undesired silicon deposition, a discontinuous nucleus layer 5 of a metal nobler than silicon is formed on the main body 1 of silicon inside the contact hole 3, before the formation of the metalized layer 4.