| 摘要 |
PURPOSE:To provide a method for forming a quantum thin line with high quality, less fluctuation in width and less boundary defects. CONSTITUTION:A process which forms a groove consisting of a side face 13 with a surface {111} and a bottom face 11 with a surface {110} as a quantum thin line burying groove and a process which grows a selective growth layer 14 from the side face of the groove by a selective lateral direction growth method and buries the groove are incorporated. By this forming method, a quantum thin line with less fluctuation of width and high quality is formed. |
