| 摘要 |
PURPOSE:To provide a basic structure for manufacturing an inexpensive photoelectric conversion element and the manufacturing method of the conversion element. CONSTITUTION:This photoelectric conversion element is formed by successively forming an i-type amorphous silicon layer 3, p-type amorphous silicon layer 4, and transparent conductive film 5 on a substrate 1 after n-type crystalline silicon powder 6 is stuck to the surface of the substrate 1 by melting a low- melting point metal 2. When such structure is used, an inexpensive photoelectric conversion element can be manufactured, because the need of a crystalline silicon substrate which has been an obstacle in reducing the cost of photoelectric conversion elements can be eliminated. In addition, the area and degree of integration of the element can be increased. |
