| 摘要 |
PURPOSE:To prevent excessive sinking in a bonding part of a bonding pad and shortcircuiting of an inner circuit by aluminum scraps by using ultrasonic bonding in some wire bonding between a semiconductor integrated circuit and a package lead of a multilayer interconnection structure. CONSTITUTION:As a wiring layer constituting a bonding pad, not a thick second layer wiring (not illustrated in the figure) but a first layer wiring 3 or a bonding pad metallic layer 7 is used. A film thickness of about 1mum can be selected which is optimum for a bonding pad. Thereby, when a thickness of a bonding pad is made about 1mum, load and power during bonding can be reduced. Proper sinking of a bonding part 10 is realized and generation of aluminum scraps is prevented. |
