| 摘要 |
PURPOSE:To enable a first semiconductor layer part to emit a light to outside efficiently with small dependency on the plane of polarization and high brightness by constituting it such that the first semiconductor layer part has distorted quantum well structure being not mixed crystal, and that a second semiconductor layer part has distorted quantum well structure being made of mixed crystals. CONSTITUTION:A semiconductor laminate 11 has a semiconductor substrate 1 and a semiconductor laminate 10. The semiconductor crystal layer 4 as an active layer, which constitutes the semiconductor laminate 10, has a semiconductor crystal layer parts 4A and 4B, and the semiconductor crystal layer 4A has distorted quantum well structure being made of mixed crystals, and besides, has an energy band gap smaller than that of the semiconductor crystal layer part 4A. Besides, electrode layers 21A and 21B are made on the semiconductor crystal layer parts 19A and 19B, and as electrode layer 21C is made on the face opposite to the semiconductor laminate 10 side of the semiconductor substrate 1. |
