| 摘要 |
PURPOSE:To manufacture such a semiconductor device that is free from the deterioration of optical sensitivity caused by misfitting of a grating at the interface of a heterojunction and provided with a high-quality film having no defect by providing a taperlike band profile and making the band coupling continuous at the boundaries between a p-type layer and i-type layer and between the i-type layer and an n-type layer. CONSTITUTION:In this non-single-crystal silicon semiconductor device having a pin type structure, a p-type layer 105, i-type layer 104, and n-type layer 103 are formed so that they can have a taper-like in-film hydrogen-concentration profile and taper-like band profile. In addition, the band coupling is made continuous at the boundaries between the layers 105 and 104 and between the layers 104 and 103. The continuous band coupling can be obtained by forming the layers 105, 104, and 103 while the in-film hydrogen concentration is controlled so that the optical band gaps between each of the layers can be formed under a taper-like condition. Therefore, the occurrence of an band offset which is produced when the layers are deposited in the conventional method can be prevented. |
