| 摘要 |
PURPOSE:To enable a passive element to be formed directly on a diversified substrate using a free material by forming at least one portion of the passive element such as a resistor and a capacitor by an extremely fine particle film which is formed by the gas deposition method. CONSTITUTION:A circuit substrate 1 is retained at a manipulator 12, pressure of a film-formation chamber 5 is reduced by a vacuum pump 7, and at the same time a gas 9 is fed to a chamber 4 for generating an extremely fine particle for applying pressure, thus enabling a raw material 11 to be heated by an evaporation bath 10 for evaporation. The evaporated atom is flocculated within air and becomes an extremely fine particle, is fed to the film-formation chamber 5 through a transport pipe 6 along with the gas 9 such as He gas due to a differential pressure between the chamber 4 for generating an extremely fine particle and the film-formation chamber 5, and is discharged from a nozzle 13 onto a surface of the circuit substrate 1 at a high speed, thus enabling an extremely thin particle film 2 to be formed. At this time, by performing scanning by moving the circuit substrate 1, the extremely thin particle film 2 with a desired pattern can be formed without using a mask. |
