| 摘要 |
PURPOSE:To improve the surface passivation effect of a photoelectric conversion element so as to reduce the series resistance loss of the element by diffusing n-type impurities so that the concentration of an n-type impurity diffusion area can become the lowest at its central part between light receiving surface electrodes and higher as going toward the electrodes. CONSTITUTION:This photoelectric conversion element is provided with an n-type impurity diffusion area 2 formed on the surface of a p-type semiconductor substrate 1 and a plurality of light receiving surface electrodes 7 which are arranged on the surface of the area 2 in parallel with each other. The electrodes 7 are provided to take out an electromotive force obtained by a photoelectromotive force effect. The n-type impurity is diffused into the area 2 so that the impurity concentration can become the lowest at its central part between the electrodes 7 and higher as going toward the electrodes 7. Therefore, the impurity concentration can be effectively reduced, and the short-wavelength sensitivity and surface passivation effect of this photoelectric conversion element can be improved. In addition, the series resistance loss of the element can be reduced. |
