| 摘要 |
The silicon carbide sintered body for a semiconductor substrate consists of 2-10 wt.% beryllium oxide as a sintering agent, 1.0 wt.% polyvinyl alcohol as a binder, and the balance of high purity and synthetic green silicon carbide powders. The SiC sintered body is prepared by (a) making slurry from green powders and distilled water, (b) shaping granular particles by spray drying, (c) molding the granules in the form of a disk and cold pressing with 50 kg/cm2, (d) laminating with two disks, (e) hot pressure sintering with 100 kg/cm2 at 2,100 deg.C for 1 hr.
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