| 摘要 |
PURPOSE:To obtain the mixed phase amorphous Si film of columnar structure, and to fit the film as a material for photoelectric conversion by forming a polycrystalline Si film having P-I-N junction structure on a substrate made of stainless, etc., implanting ions consisting of C, F, Si, etc. and H<+> and H2<+> ions at the desired position of the polycrystalline Si film and executing hydrogen plasma treatment before and after the ion implantation. CONSTITUTION:The polycrystalline Si film 72 having P-I-N junction structure is formed on the substrate 71 made of stainless, etc., and Si<+> ions are irradited in a spotted manner to form columnar amorphous Si regions 73. H<+> ions are implanted, and the whole surface is coated with an In2O3-SnO2 film. Only Si<+> and H<+> are not limited and C, F, H2<+>, etc. may be used as ions implanted at that time. Hydrogen plasma treatment is executed to the film 72 before and after the ion implantation to the lower local level density. The mixed phase amorphous Si film obtained in this manner displays excellent property as a Si film for a solar cell. |
