Semiconductor memory device.

摘要

A refresh mode switching signal generating circuit generates a refresh mode switching signal of an H level or an L level depending on whether a particular bonding pad is wire-bonded to a power supply terminal of a package. In response to the refresh mode switching signal (RMG), the refresh mode switching circuit (RMS) switches a cycle number in a refresh mode of a semiconductor memory device, so that the cycle number in a refresh mode can be changed according to requirements of users. <IMAGE>