| 摘要 |
<p>The present invention is a method for making field effect devices, such as a field effect transistors, having ultrashort gate lengths so low as five hundred angstroms or less. In accordance with the invention the gate structure (11,12,13) is grown, vertically on a substrate (10) by thin film deposition so that the length dimension of the gate is perpendicular to a major surface of the substrate. An edge of the gate-containing substrate is exposed, and the structure comprising the source, drain and channel (16,17,18) is grown on the edge. Using this approach, field effect devices with precisely controlled gate lengths of less than 100 angstroms are achievable. Moreover the active regions of the device can be immersed within semiconductor material so that surface properties do not deteriorate device performance. <IMAGE> <IMAGE></p> |
