Method for preparing semiconductor member.

摘要

A method for preparing a semiconductor member comprising steps of: making a silicon substrate porous; forming a non-porous silicon monocrystalline layer on the porous silicon substrate at a first temperature; bonding a surface of the non-porous silicon monocrystalline layer on to another substrate having an insulating material on the surface thereof; etching the porous silicon by removing the porous silicon of the bonded substrate by chemical etching; and forming a monocrystalline silicon layer on the non-porous silicon monocrystalline layer by epitaxial growth at a second temperature higher than the first temperature.