发明名称 |
Manufacturing method of non-volatile semiconductor memory device |
摘要 |
Before a high permittivity interlayer insulating film of a non-volatile memory having a two-level gate electrode structure, a surface of a substrate in a peripheral circuit MOS area is successively covered with a thermal oxide film and a polycrystalline silicon film. Before the interlayer insulating film is selectively removed on the peripheral circuit MOS area, the surface of the interlayer insulating film of the non-volatile memory is covered with a polycrystalline silicon film. When the interlayer insulating film in the peripheral circuit MOS area is removed, the polycrystalline silicon film as a lower layer in the peripheral circuit area serves as a buffer layer against contamination or damage due to the etching, and the conductive layer on the surface of the interlayer insulating film in the non-volatile memory portion also serves as a buffer layer against the contamination or damage due to the etching.
|
申请公布号 |
US5188976(A) |
申请公布日期 |
1993.02.23 |
申请号 |
US19910727052 |
申请日期 |
1991.07.09 |
申请人 |
HITACHI, LTD. |
发明人 |
KUME, HITOSHI;ADACHI, TETSUO;OHJI, YUZURU;KURE, TOKUO;USHIYAMA, MASAHIRO;KAWAKAMI, HIROSHI |
分类号 |
H01L21/8234;H01L21/8247 |
主分类号 |
H01L21/8234 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|