| 摘要 |
<p>PURPOSE:To obtain an infrared detecting device, which can perform detection visually and which has quantitativeness, by forming a device with a fluorescent body, which includes erbium or the compound thereof in the fluorescent body base material, and thin film structures including non-crystal silicone. CONSTITUTION:A transparent conductive film 4, an amorphous silicone 3, a transparent conductive film 2 are piled on a glass substrate 5, and while a fluorescent body 1 is formed on the transparent conductive film 2. As the fluorescent body base material of the fluorescent body 1, the material including lead fluoride or germanium dioxide is used. The fluorescent body 1 is obtained by adding erbium as addition material under the condition of element or compound to the base material and mixing them and burning it. Infrared ray having a wave length, for example, at 1.55mum band is received by the fluorescent body 1. The fluorescent body 1 is excited by the received infrared ray, and the red color light emission having a wave length in proportion to the intensity of the infrared ray is observed. When the amorphous silicone 3 receives the light emission, a photoelectric current in proportion to the intensity of the light emission is flowed, and quantitative detection of intensity of light can be conducted by the photoelectric current.</p> |
