| 摘要 |
PURPOSE:To prevent the generation of cracks caused by the difference of thermal expansion coefficients between silicon and semiconductor crystal by growing a silicon oxide film formed on a main plane of a silicon substrate on one side as an insulation mask and constituting an LED array. CONSTITUTION:A silicon oxide film 2a is formed on a main face 1a of a silicon substrate 1 on one side. The main face 1a is a (100) face. The silicon oxide film 2a is partially removed square. One side of the square-removed portion 7 of the film is slanted against the crystal direction of <011>. The silicon oxide film 2a formed on one side of the main face 1a in this fashion is used as an insulation mask. Semiconductor crystal is arranged to make epitaxial growth on a part of the silicon substrate selected by the insulation mask. At the same time, the semiconductor crystal 3 is grown from the epitaxial layer in a lateral direction so as to constitute an LED 5, using the growth layer. This construction makes it possible to prevent the generation of cracks on the semiconductor crystal layer 3. |
