发明名称 CUINSE2-BASED THIN-FILM SOLAR CELL AND ITS MANUFACTURE
摘要 PURPOSE:To estimate, by means of the luminous intensity of luminescent light, the characteristic of a thin-film solar cell which uses a formed CuInSe2-based thin film as an active layer and to enhance the rate of good products by a method wherein photoluminescence is adopted in order to evaluate the film quality of the CuInSe2-based thin film. CONSTITUTION:A CuInSe2-based thin-film solar cell is provided with a CuInSe2- based thin film wherein the maximum luminous intensity in the region of 0.8 to 0.9 eV of the spectrum of luminescent light emitted when light having a luminous energy of 1.0 eV is irradiated at a prescribed temperature is a prescribed value or higher. The figure shows the manufacturing process of the CuInSe2-based thin-film solar cell. Especially, after the CuInSe2-based film has been formed, the photoluminescence measuring process of a test piece is inserted. The measurement of photoluminescence is useful when the state of a proper level as the active layer of the CuInSe2-based thin-film solar cell is detected. Consequently, the CuInSe2-based thin film can be evaluated by utilizing it and the rate of good products can be enhanced.
申请公布号 JPH0541531(A) 申请公布日期 1993.02.19
申请号 JP19910305155 申请日期 1991.11.21
申请人 FUJI ELECTRIC CORP RES & DEV LTD 发明人 OSAWA MICHIO
分类号 H01L21/66;H01L31/04 主分类号 H01L21/66
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