| 摘要 |
PURPOSE:To prevent a drop in a film quality when a sputtering gas is buried in a chalcopyrite-type ternary component thin film and a plasma has a bad influence during the formation of the film l a method wherein, when the compound thin film is formed by a sputtering operation, the growth face of the film is not exposed to the plasma. CONSTITUTION:A substrate 1 on which a film is to be formed is fixed onto a rotary support plate 2 provided with a heater; it is faced, via a prescribed interval, with a Cu2Se3 target 31 and an In2SE3 target 32 on a circular ring- shaped metal support plate 4. A mesh electrode 5 is arranged on the targets 31, 32 via a prescribed interval. When this apparatus is used, a sputtering method is used and the outermost surface used to form a film is not exposed to a plasma, the damage to the film by Ar ions in the plasma during the formation of the film can be reduced. Thereby, it is possible to restrain that group III atoms are driven away from the surface of the film by particles of a group I element at a high energy. |
