| 摘要 |
<p>PURPOSE:To form two kinds of TFTs varying in characteristics on the same substrate by polycrystallizing the active layers of the TFTs by a laser annealing method and by polycrystallizing the active layers of the TFTs to be used for a matrix part by a solid phase growth method. CONSTITUTION:Source-drain electrodes consisting of Mo thin films 2 and 2n<+> Poly-Si thin films 3 are formed on a glass substrate 1. The Poly-Si thin films 5 polycrystallized by the laser annealing method and the Poly-Si thin films 6 polycrystallized by the solid phase growth method are formed to cover the source-drain electrodes. Two kinds of the TFTs 9, 10 are formed on the same substrate in such a manner.</p> |
