| 摘要 |
PURPOSE:To obtain a highly sensitive and very accurate semiconductor temperature sensor, and to utilize the temperature dependency of the reverse saturation current of a Schottky junction diode. CONSTITUTION:In the case to apply a reverse applied voltage Va to a Schottky junction diode, the voltage within the initial region regarded as a reverse saturation current Is generating, for example Va=1.0V, is applied. The temperature measurement can be made in the same way as the case of a then-mistor from an exponential reverse saturation current Is to theoretical reverse saturation current Is to the temperature, because the current increase of the voltage dependency by image-force and the currents other than the reverse saturation current Is, of a leakage current, etc., can be neglected in such a slight reverse saturation current Is. The circuit constitution, where the reverse saturation current Is can be measured with a fixed applying voltage, is made. |
