| 摘要 |
PURPOSE:To obtain a semiconductor device with extremely high heat and moisture resistances by using organopolysiloxane of end bridged type and ladder type as insulative layers between layers when forming multilayer wirings in a semiconductor device. CONSTITUTION:An Si wafer 1 includes a circuit element having exposed parts at predetermined positions and an SiO2 peotective film 2. An Al wiring layer 3 with a predetermined pattern is formed on the film 2 and then a hardened polysiloxane layer 4 is coated thereon. For the layer 4 there is used a solution obtained by solving polysiloxane of monomethylladder type into a mixed solvent consisted of cyclohexane and toluene in the volume ration of about 2:1 while keeping the concentration at about 25wt%. More specifically, this varnish is spin-coated on the wiring layer 3 and hardened by heat treatment for 10min at 300 deg.C in the atmosphere of N2. The varnish is coated thereon again and brought under another heat treatment for 30min at 350 deg.C. Then, contact holes 5 are bored at predetermined positions on the wiring layer 3 and the subsequent wiring layer and siloxane layers are repeatedly coated in a similar manner so as fo form a multilayer wirings structure. |
