首页
产品
黄页
商标
征信
会员服务
注册
登录
全部
|
企业名
|
法人/股东/高管
|
品牌/产品
|
地址
|
经营范围
发明名称
INSULATED-GATE BIPOLAR TRANSISTOR
摘要
申请公布号
JPH0541524(A)
申请公布日期
1993.02.19
申请号
JP19910195592
申请日期
1991.08.06
申请人
FUJI ELECTRIC CO LTD
发明人
IWAMURO NORIYUKI
分类号
H01L29/78;H01L29/08;H01L29/739
主分类号
H01L29/78
代理机构
代理人
主权项
地址
您可能感兴趣的专利
2-METHYL-5-(2-HYDROXYSTYRAL)-1,3,4-THIADIAZOLE
VEHICLE LUGGAGE CARRIER
AUTOMATIC ADDITION OF A CORROSION INHIBITOR TO A COOLANT SYSTEM BY OSMOTIC PRESSURE
INDUCTION BELT SEPARATION
MULTIPLE BED RAPID PRESSURE SWING ADSORPTION FOR OXYGEN
ORAL COMPOSITION FOR IMPROVING ORAL HEALTH
LAMINATED LIGHT-POLARIZING SHEET
METHOD OF MANUFACTURING AUTOMOBILE WINDSHIELD
METHODS OF AND APPARATUS FOR MANUFACTURING PILE FABRICS
KIT FOR DETERMINING THE LEVEL OF LDL CHOLESTEROL IN BODY FLUIDS
REVERSIBLE REMOVABLE TIP FOR SAWTOOTH
SLIDE FASTENER
SOLAR ENERGY COLLECTORS
COATED CELLULOSIC FILM WITH SURFACE IMPRINTS FOR THE PACKAGING OF SOFT CHEESES
ANGLED DOUGH CUTTER
CONTROLLABLE TOOLING FOR GEAR CUTTING MACHINE
ADJUSTABLE BORING HEAD
FOOD EXTRUDER PRESSURE INDICATOR
CERAMIC INSULATOR FOR AN EXHAUST GAS OXYGEN SENSOR
ELLIPSOID RADIATION COLLECTOR AND METHOD
