| 摘要 |
<p>PURPOSE:To prevent the shorting between display electrodes and auxiliary capacity electrodes and to allow the wider margin of a gate voltage to be taken by providing semiconductor films exhibiting dependency on frequencies between the display electrodes and the auxiliary capacity electrodes. CONSTITUTION:An a-Si layer 11, an SiNx film 12 and an N<+> a-Si layer 13 exist between the display electrode 6 and a gate insulating layer 7 of the lower layer. Since these three layers 11, 12, 13 are laminated between ITO 6 and the gate insulating layer 7, the shorting between the ITO 6 and the gate insulating layer 7 is prevented even if there is a pinhole in the gate insulating layer 7. Since the a-Si layer 11 exhibits the dependency on frequencies, the capacity is smaller in a charging area and the writing of signals is easier. The written signal are liable to be held in a holding area.</p> |
