| 摘要 |
<p>PURPOSE:To reduce the power supply noise of a semiconductor device provided with a bypass capacitor for absorbing noise connected in parallel with a power source without providing any external bypass capacitor. CONSTITUTION:This semiconductor device is constituted in such a way that a p-n junction capacitance C is constituted by forming a layer 2 of one conductivity type 2 on the lower surface of a semiconductor substrate 1 of the other conductivity type and a reverse bias is applied across the capacitance C by respectively connecting two wires 4 and 5 for high voltage and low voltage connected with a DC power source 3 to the layer 2 and substrate 1.</p> |
